• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to an optical semiconductor emitter operable in an optical mode and having a gain portion, the emitter comprising a semiconductor waveguide structure made up of two alternating layers of semiconductor materials A, B having refractive indices of N a and N b , having an effective refractive index N o of the optical mode in the low-loss waveguide between N a and N b, the waveguide structure being transparent to light emitted from the amplifying section, wherein the ratio of the thickness of the materials A and B is chosen to be the waveguide structure with the effective refractive index N 0, which is identical to the refractive index of the gain region or within a defect range of 5% compared to the refractive index of the amplification section, the amplification region being on impact adjacent to the low-loss waveguide, and wherein the size and shape of the optical modes in the low loss waveguide structure and in the gain region are equal or within a 10% error range. Desirably, at least one of the semiconductor materials A and B should have a sufficiently large bandgap so that the passive waveguide structure blocks current at a voltage bias of 15V.
    公开号:CH710975B1
    申请号:CH01088/16
    申请日:2015-02-23
    公开日:2019-09-30
    发明作者:Genevieve Caneau Catherine；Xie Feng；Zah Chung-En
    申请人:Thorlabs Quantum Electronics Inc；
    IPC主号:
    专利说明:

    (57) The invention relates to an optical semiconductor emitter which can be operated in an optical mode and has an amplification section, the emitter comprising a semiconductor waveguide structure which is produced from two alternating layers of semiconductor materials A, B and which have refractive indices of N a and N b , with an effective refractive index N o of the optical mode in the low loss waveguide between N a and N b , the waveguide structure being transparent to light emitted by the gain section, the ratio of the thickness of materials A and B being chosen to be the To provide the waveguide structure with the effective refractive index N o , which is identical to the refractive index of the gain region or within an error range of 5% compared to the refractive index of the reinforcement section, where the gain region is butt adjacent to the low loss waveguide and where where the size and shape of the optical modes in the low loss waveguide structure and in the gain region are the same or within an error range of 10%. Desirably, at least one of the semiconductor materials A and B should have a sufficiently large band gap so that the passive waveguide structure blocks current under a voltage bias of 15 V.
    CH 710 975 B1
    Description Cross Reference to Related Applications This application claims priority from U.S. Provisional Patent Application No. 61/946700 which was filed on February 28, 2014. The disclosure of U.S. Provisional Patent Application No. 61/946 700 is incorporated herein by reference.
    This application is also based on the preliminary application with the serial number. 61/732 289, which was filed on November 30, 2012, and application no. PCT / US 2013/072 195, which was filed on November 27, 2013.
    Field of the Invention The present description relates generally to quantum cascade lasers ("QCLs"), and more particularly to passive waveguide structures for use in QCLs and QCLs using such structures.
    Technical Background A quantum cascade laser is a unipolar device. It uses inter-sub band transitions, unlike traditional direct bandgap semiconductor lasers, and it usually emits in the mid-infrared ("mid-IR") or far-infrared ("far-IR") wavelength range.
    Middle infrared sources are of interest for various reasons. Strong mid-infrared absorption lines from the vibration of chemical bonds can be used to identify a molecular composition. For example, Fig. 1 (prior art) shows a strong absorption line of CO 2 close to 4.3 μm. A single wavelength, medium IR light source, such as a QCL, can be used to detect gas molecules, such as CO 2 , by detecting the absorption of a characteristic wavelength, such as 4.3 μm.
    In order to achieve single wavelength emission, grating structures can be added to the QCL in the active region to produce a quantum cascade laser ("DFB QCL") with distributed feedback ("DFB"). DFB-QCLs generally emit a single wavelength and can only be tuned over a small wavelength range, which allows them to be used to detect a single species of small gas molecules, such as CO 2 . However, some large molecules in solid or liquid phases have broad and / or complex absorption spectra, such as the explosive substances in Fig. 2, which shows infrared absorption spectra for PETN 102, RDX 104, TATP 106 and TNT 108. To detect and differentiate substances with such broad and / or complex absorption spectra, QCLs with both single wavelength emission and a wide frequency range are desirable. A region R, which is marked in the figure, can be used, for example, to differentiate between the spectra shown and to detect them.
    External resonator QCLs can have both single wavelength emission and a wide frequency range, but are expensive and bulky. A distributed Bragg reflector (“DBR”) - QCL has one or both reflection gratings outside the laser's gain range, which allows the grids to be independently thermally adjusted and a wider frequency range than a DFB-QCL. Thus, a DBR-QCL is a potential alternative to external resonator QCLs with the advantages of relatively low cost and a compact, robust and monolithic shape.
    DBR-QCLs typically have a substantially uniform common core, as shown in Figure 3 (prior art). The lattice layers on DBR sections are formed directly on the layer (s) of the common core. Since the area of the common core under the DBR is passive in operation (not part of the gain area), which receives no or minimal pumping current during operation (due to additional associated current blocking structures or the like), it has a relatively strong resonance absorption.
    Implementing a waveguide other than the active region waveguide in a DBR-QCL is disclosed in the related applications referred to above. By using a different waveguide for the DBRs, which is transparent (or at least more transparent than the active region waveguide) for wavelengths in the working wavelength range, absorption losses in the DBRs can be reduced, which results in a higher maximum power and a wider overall setting (laser) -Area allowed in the laser device.
    Summary In order to provide the advantages described above of including a transparent waveguide in a DBR-QCL as well as providing similar advantages of a transparent waveguide in other active semiconductor optical devices, the present disclosure includes a transparent (or relatively transparent) waveguide structure consisting of two alternating ones Layers of semiconductor materials A and B is produced, which have refractive indices of N a and N b . Desirably, at least one of A and B should have a relatively large band gap,
    CH 710 975 B1 so that the passive waveguide structure can block electrical current very well, even under high voltage bias. The effective refractive index N o of the optical mode in the passive waveguide structure will lie between N a and N b ; for a good propagation of the optical mode, the size of the optical mode / modes in the passive and the amplification section should be the same or almost the same.
    An embodiment of the invention provides a semiconductor optical emitter that is operable in a predetermined optical mode and has a gain section, the emitter including a low loss waveguide structure made from two alternating layers of semiconductor materials A and B, which have refractive indices N a and N b , respectively, with an effective refractive index N o of the optical mode in the low-loss waveguide structure between N a and N b , the waveguide structure being transparent to light emitted by the amplifying section, the ratio of the thickness of the materials A and B is selected to provide the waveguide structure with the effective refractive index N o , which is identical to a refractive index of the gain region or within an error range of 5% compared to the refractive index of the gain portion, and wherein the gain region is adjacent to the low loss waveguide structure and wherein the size and shape of the optical modes in the low loss waveguide structure and in the gain region is / are the same or are within an error range of 10%.
    [0012] These and other features and advantages will be apparent to those skilled in the art from the description and drawings.
    Brief description of the drawings
    [0013]Fig. 1 (Prior Art) is a graph of an absorption spectrum for CO 2 in the infrared. Fig. 2 (Prior Art) is a graph of absorption spectra of various explosive compositions in the infrared. Fig. 3 (Prior Art) is a schematic cross-sectional diagram of a DBR-QCL. Figures 4A, 4B and 4C 14 are schematic cross-sectional views of various alternative aspects of certain embodiments of a device according to the present disclosure. 5A and 5B 14 are graphs of optical mode profiles of some embodiments of structures according to the present disclosure as generated by computer simulation. Fig. 6 10 is a graph of a pulsed V / I curve test of an embodiment of a passive waveguide structure in accordance with the present disclosure. Fig. 7 FIG. 10 is a graphical plot of a pulsed LIV test for a DBR-QCL with a passive waveguide structure in accordance with the present disclosure and a comparison DBR-QCL.
    Detailed Description The present invention can be more readily understood by reference to the following detailed description, drawings, examples, and claims, and their previous and following description. However, before the present compositions, articles, devices, and methods are disclosed and described, it should be understood that this invention is not limited to the specific compositions, articles, devices, and methods disclosed, unless otherwise specified, since this of course varies can. It should also be understood that the terminology used here is for the purpose of describing certain aspects only and is not intended to be limiting.
    Disclosed are materials, compositions, and components that can be used for, can be used with, can be used in preparation for, or what are embodiments of the disclosed method and compositions. These and other materials are disclosed herein and it should be understood that when combinations, subsets, interactions, groups, etc. of these materials are disclosed, while a particular reference to each different individual and collective combinations and permutations of these compositions may not be disclosed , each of which is specifically intended and described here. Thus, if a class of substitutes A, B and C is disclosed, as well as a class of substitutes D, E and F and an example of a combination embodiment A-D is disclosed, then each is considered individually and collectively. Thus, in this example, each of the combinations A-E, A-F, B-D, B-E, B-F, C-D, C-E and C-F is specifically considered and should be considered disclosed from the disclosure of A, B and / or C; D, E and / or F; and the example combination A-D. Similarly, each subset or combination of these is also specifically considered and disclosed. Thus, for example, the subset of A-E, B-F and C-E should be considered as specifically considered and from the disclosure of A, B and / or C; D, E and / or F; and the example combination A-D. This concept applies to all aspects of this disclosure, including,
    CH 710 975 B1 but not limited to all components of compositions and steps in the processes of making and using the disclosed compositions. Thus, if there are a number of additional steps that can be performed, it should be understood that each of these additional steps can be performed with any specific embodiment or combination of the embodiments of the disclosed methods, and any such combination will be specifically considered and should be considered disclosed.
    In this description and in the claims which follow, reference is made to a number of terms which should be defined as having the following meaning:
    “Contains”, “contain” or similar terms mean inclusion, but are not limited to this, that is, inclusive and not exclusive.
    The term "approximately" refers to all terms in the area, unless stated otherwise. For example, about 1, 2, or 3 is equivalent to about 1, about 2, or about 3, and further includes one of about 1-3, about 1-2, and about 2-3. Specific and preferred values disclosed for compositions, components, ingredients, additives and similar aspects and areas thereof are for illustrative purposes only; they exclude undefined other values or other values within defined ranges. The compositions and methods of the disclosure include those that have any value or combination of the values, specific values, more specific values, and preferred values described herein.
    [0018] The indefinite article "a" / "a" and its corresponding specific article "the" / "the" / "the" used here mean at least one / one or more, unless otherwise specified.
    The present disclosure includes a transparent waveguide structure (or relatively transparent, relative to a non-live, active or gain section waveguide) made from two alternating layers of semiconductor materials A and B, which have refractive indices of N a and N b have. Desirably, at least one of A and B should have a relatively large band gap so that the passive waveguide structure can very well block electrical current, even under a relatively high voltage bias. The effective refractive index of the optical mode in the waveguide structure N o will be between N a and N b ; for good propagation of the optical mode, N o should be equal (or nearly equal) to the refractive index in an associated gain section which is butt adjacent to the passive waveguide structure. For a good spread of the optical mode, the size of the optical mode / modes in the passive and in the amplification area should also be the same or approximately the same.
    In the case of QCLs that emit in the mid-infrared that are grown on InP substrates, the transparent waveguide core (on average) should be matched in terms of its grating to that of InP using components such as AIGalnAs or GalnAsP or AIGaln (P) Sb, the composition (s) being adjusted for the desired refractive index (which matches the corresponding active or non-transparent waveguide structure) and for matching the grating at InP. For a QCL core (λ = 4.5 μm), GalnAsP or AIGalnAs that emits a rather short wavelength, a band gap of approximately 0.95-1 eV (corresponding to a photoluminescence wavelength around 1.28 μm) has the suitable refractive index at room temperature on, but for a QCL core that emits by λ = 10-11 μm, the band gap of the suitable GalnAsP or AIGalnAs material should be around 0.8-0.9 eV (corresponding to a photoluminescence wavelength around 1.45 microns).
    In view of providing the desired insulating or semi-insulating nature of the transparent waveguide, InP and AllnAs can be grown semi-insulating. Although AllnAs has been grown semi-isolatively at low growth temperature, either due to native defects or from C contamination, AllnAs is usually grown semi-isolatively by adding dopant atoms such as Fe, Ti, Ru or other transition metals that form deep traps. which free carriers capture; this is also the case for InP. It has been shown (see for example [B. Teil, U. Koren and BI Miller, Metalorganic vapor-phase-epitaxial growth of Fe-doped lnO.53GaO.47As, J. Appi. Phys 61, 1172, 1987], [ DG Knight, WT Moore and RA Bruce, Growth of semi-insulating InGaAsP alloys using low pressure MOCVD, J. Crystal Growth 124, 352, 1992]) that GalnAsP with a small band gap (<0.8-0.9 eV) difficult to dope for semi-insulating qualities; if they are semiconducting at room temperature, they become conducting at a higher temperature (400 K), which is the temperature at which a QCL core is likely to operate. However, the refractive indices of InP and AllnAs are too low to match the refractive index of the active core of the laser. So they cannot act as the core material of a passive waveguide.
    The solution to this particular problem provided by the present disclosure is not to use a homogeneous material as the transparent waveguide, but rather a stack of AllnAs and GalnAs layers. The GalnAs is left undoped, while the AllnAs is desirably doped with a deep trap element. Undoped AllnAs, as grown in a reactor, is something of an n-type and is accordingly taken as doping Fe, which acts as an impurity for the electrons. If the thickness of the semi-insulating material is large enough (0.5 μm for example), a tunnel effect does not occur through it and the resulting stack is sufficiently insulating. Different stacks could be selected as alternative embodiments, such as GalnAs / InP; AIGalnAs / AIGalnAs or GalnAsP / GalnAsP of different compositions, with a small band gap / large band gap - or another combination.
    CH 710 975 B1 A transparent or low loss waveguide structure with a core made of alternating undoped (or doped, for semi-insulating behavior) GalnAs / AllnAs layers is shown in Fig. 4C. The core is sandwiched between upper and lower InP cladding layers (n-doped) (note that the n with the superscript "-" is generally considered a low-n-type doping in the art) as one active QCL core. The ratio of the thickness of GalnAs and AllnAs is designed in such a way that the effective refractive index of the optical mode in the passive waveguide is the same as that in the QCL laser core waveguide. If AllnAs is appropriately doped for semi-insulating behavior, the core of the passive waveguide can block electrical energy up to a certain voltage bias (> 20 V), so that no fault current can pass through the passive waveguide. Therefore, no additional current blocking (insulation) structures are required and the manufacture of the devices can be simplified.
    As can be seen in Figure 4A, the low loss waveguide can be used for the front and rear DBR gratings. As can be seen in the alternative of Figure 4B, the low loss waveguide can also be used for the phase section if desired (and if the phase section is controlled by a micro heater instead of current injection, the low loss waveguide is isolating in the case ( that means semi-insulating)).
    The passive waveguide according to the present disclosure will have a low optical loss, which is mainly due to a reduced free carrier absorption. Because the GalnAs / AllnAs material is either undoped or doped to produce semi-insulating properties, the optical loss in the low loss waveguide core is negligible. The effective refractive index of the passive waveguide can be set between 3.1 (the refractive index of AllnAs) and 3.3 (the refractive index of GalnAs) by changing the ratio of the thicknesses of AllnAs and GalnAs. Therefore, the effective refractive index of the passive waveguide can easily be designed to match the effective refractive index of the optical mode in the active (light emitting) waveguide (core). The passive waveguide according to this embodiment, when the AllnAs layers in the waveguide structure are doped to be semi-insulating, can block electrical current up to a high voltage bias (> 20 V). This can further simplify the device manufacturing process since no additional isolation is required, so the isolation regions shown in Figures 4A and 4B are optional or can be omitted.
    The currently most preferred embodiment of the present disclosure is a passive low loss optical waveguide core structure that can be used in middle IR optoelectronic devices, particularly in combination with QCL active materials. This is particularly useful in the case of a laser with a relatively thick active region that emits at long wavelengths, such as a QCL that emits in the middle IR region or beyond.
    For some devices, a waveguide core section (or sections) is desirable which is butt adjacent to an active (= light emitting) core section (or sections). The waveguide core material is selected such that the optical mode proceeds at the junction with as little loss as possible. This is partly a problem of growth; in addition, however, the material of the waveguide core is desirably selected for a suitable refractive index, usually identical to the refractive index of the active core. If the waveguide core is undoped or lightly doped, propagation loss through the waveguide will contain little or no free carrier absorption. As noted, in some embodiments, it would also be very advantageous if the waveguide core were not simply undoped, but rather semi-insulating, so that current injected into the active core would not escape into the waveguide and would not be wasted.
    Therefore, a desirable low loss waveguide structure has a core made of alternating undoped (or iron doped) AglnAs / AllnAs layers as shown in Fig. 4C. The core is sandwiched between upper and lower InP cladding layers (n-doped), similar to the QCL core. The total thickness of the passive waveguide core is the same as that of the QC laser core. The thickness of a pair of GalnAs / AllnAs should be greater than 0.1 μm. The ratio of the thicknesses of GalnAs and AllnAs is designed in such a way that the effective refractive index of the optical mode in the passive waveguide corresponds to that in the waveguide with QC laser core; the ratio of the thicknesses will also be greater than 1% and less than 99% (not a pure material). - This fact exists due to the range of refractive indices that are sought. The size of the optical mode in the passive waveguide should be similar to that in the QC laser core waveguide. 5A and 5B show the simulated optical modes of two passive waveguides with different Dieken ratios. 5A shows the optical mode in the passive waveguide structure with a GalnAs / AllnAs thickness ratio of 50/50. Here, a pair of GalnAs and AllnAs layers have a thickness of 0.5 μm. The effective refractive index is 3.169, which is slightly lower than the target value (refractive index of the optical mode in a particular QCL active section) of 3.2172. 5B shows the optical mode according to the simulation in the passive waveguide structure with a GalnAs / AllnAs ratio of 68/32. The effective refractive index is 3.207, which corresponds quite well to the determined effective refractive index of the active core.
    The low loss, doped waveguide embodiment can block high voltage bias (> 20 V) electrical current thanks to containing AllnAs layers thick enough which are doped grown to be semi-insulating. 6 shows a test voltage-current (VI) curve of a square plane (square mesa)
    CH 710 975 B1 a passive waveguide structure with such a doping. It shows no apparent leakage current up to a voltage bias higher than 25 V.
    A DBR-QCL wafer with this passive waveguide structure was manufactured. Both a regular DBR-QCL (a QCL that has the same active waveguide in the gain and DBR sections) and a passive waveguide DBR-QCL (using the passive waveguide core to create the QCL- Core to replace the front and rear DBR sections). Fig. 7 shows the light-current-voltage (LIV) curves of a DBR-QCL with passive waveguide and those of a regular DBR-QCL of the same wafer and with the same strip thickness. The LIVs are similar. Since this is the first wafer to be grown, the fabrication is not perfect, especially at the transition area between the reinforcement and DBR sections. The data shown here are only preliminary results. Higher output power and a possible wider setting range are expected in the future with the DBR-QCL with the passive waveguide. But what can be seen is that laser activity can be achieved at lower voltages, even in this first attempt.
    [0031] Embodiments here are desirably a pulsed optical mode, but a continuous optical mode may be useful in some applications. A laser pulse duration can range from approximately 1 ns to approximately 1 ms. In some embodiments, the pulse width at FWHM is approximately 1 ns, 2 ns, 3 ns, 4 ns, 5 ns, 6 ns, 7 ns, 8 ns, 9 ns, 10 ns, 20 ns, 50 ns, 60 ns, 70 ns , 80 ns, 90 ns, 100 ns, 200 ns, 300 ns, 400 ns, 500 ns, 600 ns, 700 ns, 800 ns, 900 ns, 1 ps, 10 ps, 100 ps or 1 ms. In some embodiments, devices embodied herein may be designed to fire all laser sections simultaneously, individually, and / or in a sequential or programmed order.
    权利要求:
    Claims (8)
    [1]
    Embodiments can be used in any number of methods, IR radiation and in particular IR laser radiation would be advantageous. Particular applications include IR absorption or reflection measurements, IR and FTIR spectroscopy, Raman spectroscopy, gas and / or chemical weapons detection, chemical dynamics and kinetics measurements, thermal experiments, etc. In one embodiment the embodiments are used in IR absorption measurements to identify molecular compositions.
    While the present invention has been described in some length and with some specifics with respect to the various embodiments described, it is not intended to be limited to any of these particulars or embodiments or any particular embodiment, but is intended to be related to FIG appended claims are to be construed so as to be the broadest possible interpretation of such claims in relation to the prior art and therefore to effectively encompass the intended scope of the invention. Furthermore, the foregoing describes the invention in terms of embodiments that are foreseeable by the inventor, for which a detailed description has been available, although insignificant modifications of the invention, which are currently not foreseeable, nevertheless represent equivalents thereto.
    claims
    1. An optical semiconductor emitter which can be operated in a predetermined optical mode and has a reinforcement section, the emitter having a waveguide structure which is produced from alternating layers of at least two semiconductor materials A and B which have refractive indices N a and N b , respectively , with an effective refractive index N o of the optical mode in the waveguide structure between N a and N b , the waveguide structure being transparent to light emitted by the amplifying section, the ratio of the thickness of the materials A and B being chosen to match the waveguide structure with the effective refractive index N o , which is identical to a refractive index of the reinforcing section or within an error range of 5% in comparison to the refractive index of the reinforcing section, the reinforcing section being butt-connected to the waveguide structure, and the size and Shape of the optical mode in the waveguide structure and in the amplification section are the same or are within an error range of 10%.
    [2]
    2. Emitter according to claim 1, wherein at least one of the semiconductor materials A and B has a sufficiently large band gap so that the waveguide structure blocks current under a voltage bias of 15 V.
    [3]
    3. Emitter according to claim 1, wherein at least one of the semiconductor materials A and B has a sufficiently large band gap so that the waveguide structure blocks current under a voltage bias of 20 V.
    [4]
    4. Emitter according to claim 1, wherein at least one of the semiconductor materials A and B has a sufficiently large band gap so that the waveguide structure blocks current under a voltage bias of 25 V.
    [5]
    5. Emitter according to claim 1, wherein the material A is AllnAs and material B is GalnAs.
    [6]
    6. Emitter according to claim 5, wherein the AllnAs and the GalnAs are left undoped.
    [7]
    7. Emitter according to claim 5, wherein the GalnAs is left undoped and the AllnAs is doped with an element or elements with a deep impurity.
    CH 710 975 B1
    [8]
    8. Emitter according to claim 7, wherein the element or elements with deep impurity is one of or a combination of iron and titanium.
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    法律状态:
    优先权:
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    PCT/US2015/017022|WO2015183356A2|2014-02-28|2015-02-23|Passive waveguide structure with alternating gainas/alinas layers for mid-infrared optoelectronic devices|
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